Nano-imprint lithography methods
US8557130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Oct 2, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In forming a pattern on a substrate with reduced pattern error using a mold having an area smaller than an area of the substrate, a first resin pattern is formed on at least a first of a plurality of regions of an etching object layer by imprinting resin applied to the etching object layer using a first mold The etching object layer is then etched using the first resin pattern as an etching mask. A second resin pattern is formed on at least a second of the plurality of regions by imprinting resin applied to the etching object layer using a second mold. The etching object layer is again etched using the second resin pattern as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.