Method of making a metal oxide film, laminates and electronic devices
US8557352B2 · kind B2 · utility
1Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Jun 19, 2007 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | May 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/33
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object is to provide a method of making a metal oxide film with a sufficiently high degree of crystal orientation, without difficulties, at low cost, and with little damage to a base material and the metal oxide film, and to provide laminates and electronic devices using the same. A method includes a step of forming a metal film having a (111) plane, on a base material; a step of forming a metal oxide film on the (111) plane of the metal film; and a step of maintaining a temperature of the metal oxide film formed on the (111) plane of the metal film, at 25-600° C. and irradiating the metal oxide film with UV light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.