Method for fabricating micro and nanostructures in a material
US8557612B2 · kind B2 · utility
11Cited by
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23Claims
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Key dates
| Filing date | Jun 25, 2010 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Aug 18, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0361
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.