Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same
US8557627B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Jan 28, 2013 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jan 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.