Method for providing lateral thermal processing of thin films on low-temperature substrates
US8557642B2 · kind B2 · utility
13Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2011 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jan 11, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29C2035/0877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.