Method for fabricating P-type polycrystalline silicon-germanium structure

US8557688B2 · kind B2 · utility

Assignee

• National Yunlin University of Science and Technology · TW

Inventors

• Jian Lin · San Diego, US
• Pai-Yu Chang · Douliu, TW

Key dates

• Filing date: Sep 28, 2012
• Grant date: Oct 15, 2013
• Expiry date: Sep 28, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for fabricating a P-type polycrystalline silicon-germanium structure comprises steps: forming an aluminum layer and an amorphous germanium layer on a P-type monocrystalline silicon substrate in sequence; annealing the P-type monocrystalline silicon substrate, the aluminum layer and the amorphous germanium layer at a temperature of 400-650° C.; and undertaking an aluminum-induced crystallization process in which germanium atoms of the amorphous germanium layer and silicon atoms of the P-type monocrystalline silicon substrate simultaneously pass through the aluminum layer and then the amorphous germanium layer being induced and converted into a P-type polycrystalline silicon-germanium layer between the P-type monocrystalline silicon substrate and the aluminum layer. The present invention is a simple, reliable and low-cost method to fabricate a P-type polycrystalline silicon-germanium layer on a P-type monocrystalline silicon substrate. In addition, the obtained P-type polycrystalline silicon-germanium layer can convert sunlight of longer wavelengths into electric energy.