Gas cluster ion beam etching process for metal-containing materials
US8557710B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 1, 2011 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Oct 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.