Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process
US8558195B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.