Nonvolatile memory cell and method of manufacturing the same
US8558295B2 · kind B2 · utility
4Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2010 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Oct 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.