Threshold detecting method and verify method of memory cells
US8559226B2 · kind B2 · utility
14Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2011 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jul 18, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a threshold detecting method for detecting threshold values of nonvolatile semiconductor memory cells comprises applying a preset voltage to a word line connected to the memory cells, and performing bit-line sense at two different timings during discharging of one of a bit line connected to the memory cells and a node corresponding to the bit line, while a potential of the word line is kept constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.