Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators
US8559478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jan 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3414
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.