Embedded RF PA temperature compensating bias transistor

US8559898B2 · kind B2 · utility

Assignee

• RF Micro Devices, Inc. · US

Inventors

• David E. Jones · Layton, US
• Chris Levesque · Willow View Lane, US
• William David Southcombe · San Diego, US
• Scott Yoder · Fuquay-Varina, US
• Terry J. Stockert · Cedar Rapids, US

Key dates

• Filing date: Nov 2, 2011
• Grant date: Oct 15, 2013
• Expiry date: Nov 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03F2203/21157
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.