Integrated RF front end with stacked transistor switch
US8559907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2012 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Mar 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/61
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.