Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing
US8562849B2 · kind B2 · utility
2Cited by
18References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 30, 2009 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.