Forming a bridging feature using chromeless phase-shift lithography
US8563199B2 · kind B2 · utility
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7References
18Claims
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Key dates
| Filing date | Oct 7, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Oct 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An elongated, chromeless, bridging feature is formed on a photolithography mask with an etching depth that causes a nominal phase difference of more than 180 degrees to energy passing through the photolithography mask. A corresponding photoresist feature is formed using the bridging feature. The phase difference may be chosen to minimize dimensional variation of the corresponding photoresist feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.