Method of forming semiconductor device
US8563371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Apr 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Provided is a method of forming a semiconductor device. The method may include forming a first insulating layer on a semiconductor substrate. A first polycrystalline silicon layer may be formed on the first insulating layer. A second insulating layer may be formed on the first polycrystalline silicon layer. A second polycrystalline silicon layer may be formed on the second insulating layer. A mask pattern may be formed on the second polycrystalline silicon layer. The second polycrystalline silicon layer may be patterned using the mask pattern as an etch mask to form a second polycrystalline silicon pattern exposing a portion of the second insulating layer. A sidewall of the second polycrystalline silicon pattern may include a first amorphous region. The first amorphous region may be crystallized by a first recrystallization process. The exposed portion of the second insulating layer may be removed to form a second insulating pattern exposing a portion of the first polycrystalline silicon layer. The exposed portion of the first polycrystalline silicon layer may be removed to form a first polycrystalline silicon pattern exposing a portion of the first insulating layer. The exposed po…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.