Method for fabricating SOI substrate
US8563401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2009 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Nov 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface 9 or the breakage of a bonded wafer.Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from a surface thereof so as to form an ion-implanted layer 2; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 and the transparent insulating substrate 3; subjecting the bonded wafer to a heat treatment at 150° C. or higher but not higher than 350° C. so as to obtain a laminate 6; and irradiating visible light at a side of the transparent insulating substrate 3 of the laminate 6 toward the ion-implanted layer 2 of the silicon wafer 5 or the silicon wafe…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.