Electronic devices made with metal Schiff base complexes
US8563856B2 · kind B2 · utility
1Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Oct 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to new electronic devices including a layer comprising a photoactive material and metal Schiff base complex, wherein the metal Schiff base complex is present as a host for the photoactive material or in a layer between the cathode and the photoactive material containing layer, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.