Photodetector for detecting energy line in a first wavelength region and in a second wavelength region
US8564036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2010 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Sep 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12043
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a photodetector 1, a low-resistance Si substrate 3, an insulating layer 4, a high-resistance Si substrate 5, and an Si photodiode 20 construct a hermetically sealed package for an InGaAs photodiode 30 placed within a recess 6, while an electric passage part 8 of the low-resistance Si substrate 3 and a wiring film 15 achieve electric wiring for the Si photodiode 20 and InGaAs photodiode 30. While a p-type region 22 of the Si photodiode 20 is disposed in a part on the rear face 21b side of an Si substrate 21, a p-type region 32 of the InGaAs photodiode 30 is disposed in a part on the front face 31a side of an InGaAs substrate 31.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.