Contact barrier modulation of field effect transistors

US8564048B2 · kind B2 · utility

Assignee

• University of Florida Research Foundation, INC. · US

Inventors

• Andrew G. Rinzler · Newberry, US
• Bo Liu · San Diego, US
• Mitchell Austin McCarthy · Gainesville, US
• John R. Reynolds · Deltona, US
• Franky So · Tempe, US

Key dates

• Filing date: Jun 21, 2012
• Grant date: Oct 22, 2013
• Expiry date: Jun 21, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/938
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Embodiments of the invention relate to field effect transistors. The field effect transistor includes a gate electrode for providing a gate field, a first electrode including a conductive material having a low carrier density and a low density of electronic states, a second electrode, and a semiconductor. Contact barrier modulation includes barrier height lowering of a Schottky contact between the first electrode and the semiconductor. In some embodiments of the invention, a vertical field effect transistor employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.