Vertical hall sensor and method for producing a vertical hall sensor
US8564083B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Apr 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a vertical Hall sensor integrated in a semiconductor chip and a method for the production thereof. The vertical Hall sensor has an electrically conductive well of a first conductivity type, which is embedded in an electrically conductive region of a second conductivity type. The electrical contacts are arranged along a straight line on a planar surface of the electrically conductive well. The electrically conductive well is generated by means of high-energy ion implantation and subsequent heating, so that it has a doping profile which either has a maximum which is located at a depth T1 from the planar surface of the electrically conductive well, or is essentially constant up to a depth T2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.