Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
US8564088B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 2008 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Oct 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor body, a semiconductor device has an active region with a vertical drift section of a first conduction type and a near-surface lateral well of a second, complementary conduction type. An edge region surrounding this active region comprises a variably laterally doped doping material zone (VLD zone). This VLD zone likewise has the second, complementary conduction type and adjoins the well. The concentration of doping material of the VLD zone decreases to the concentration of doping material of the drift section along the VLD zone towards a semiconductor chip edge. Between the lateral well and the VLD zone, a transitional region is provided which contains at least one zone of complementary doping located at a vertically lower point than the well in the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.