Reverse conducting IGBT

US8564097B2 · kind B2 · utility

Assignee

• SINOPOWER SEMICONDUCTOR, INC. · TW

Inventors

• Florin Udrea · Cambridge, GB
• Chih-Wei Hsu · Hsinchu, TW
• Wei-Chieh Lin · Hsinchu, TW

Key dates

• Filing date: Apr 15, 2010
• Grant date: Oct 22, 2013
• Expiry date: Aug 7, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

An insulated gate bipolar transistor (IGBT) is provided comprising a semiconductor substrate having the following regions in sequence: (i) a first region of a first conductive type having opposing surfaces, a column region of a second conductive type within the first region extending from a first of said opposing surfaces; (ii) a drift region of the second conductive type; (iii) a second region of the first conductive type, and (iv) a third region of the second conductive type. There is provided a gate electrode disposed to form a channel between the third region and the drift region, a first electrode operatively connected to the second region and the third region, a second electrode operatively connected to the first region and the column region. The arrangement of the IGBT is such that the column region is spaced from a second surface of the opposing surfaces of the first region, whereby a forward conduction path extends sequentially through the third region, the second region, the drift region, and the first region, and whereby a reverse conduction path extends sequentially through the second region, the drift region, the first region and the column region. Reverse conduction o…