Passivation layer structure of semiconductor device and method for forming the same
US8564104B2 · kind B2 · utility
5Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Apr 11, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.