Low resistivity contact
US8564129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Aug 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10−6 ohms·cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.