Magnetic field sensor

US8564287B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Frederik Willem Maurits Vanhelmont · Maaseik, BE
• Mark Isler · Lebanon, US
• Andreas Bernardus Maria Jansman · Nuenen, NL
• Robertus Adrianus Maria Wolters · Eindhoven, NL

Key dates

• Filing date: Feb 3, 2011
• Grant date: Oct 22, 2013
• Expiry date: Dec 23, 2031

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R33/096
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.