Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition
US8568530B2 · kind B2 · utility
10Cited by
31References
19Claims
0Family size
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Key dates
| Filing date | Jun 8, 2006 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Jun 15, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula:(R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.