Patent · US Active

Silicon carbide matrix composite material, process for producing the same and process for producing part of silicon carbide matrix composite material

US8568650B2 · kind B2 · utility

1Cited by

7References

19Claims

0Family size

Assignee

Kabushiki Kaisha Toshiba · JP

Inventors

Shoko Suyama · Kawasaki, JP
Tsuneji Kameda · Tokyo, JP
Yoshiyasu Itoh · Yokohama, JP

Key dates

Filing date	May 24, 2007
Grant date	Oct 29, 2013
Priority date	—
Expiry date	Mar 2, 2028

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC04B2237/365
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 mass % based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.