Directly fabricated nanoparticles for raman scattering

US8568878B2 · kind B2 · utility

Assignee

• The Board of Trustees of the Leland Stanford Junior University · US

Inventors

• Robert Wilson · Saratoga, US
• Jung-Sub Wi · Tsukuba, JP
• Shan X. Wang · Portola Valley, US
• Edward S. Barnard · Redwood City, US
• Mark L. Brongersma · Stanford, US
• Mary Tang · San Francisco, US

Key dates

• Filing date: Apr 8, 2011
• Grant date: Oct 29, 2013
• Expiry date: Aug 3, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/2995
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A Raman-active nanoparticle is provided that includes a dish-shape plasmonically active metal base, and a plasmonically active metal pillar disposed on the plasmonically active metal base, where the plasmonically active metal pillar is disposed within the dish-shape plasmonically active metal base and normal to a bottom of the dish-shape plasmonically active metal base, where a circular gap is disposed between the dish-shape plasmonically active metal pillar and inner walls of the dish-shape plasmonically active metal base. In one embodiment a Raman-active nanoparticle is provided that includes a dish-shape base having a dielectric material, an electrically conductive layer disposed on the inner surface of the dish-shape base, and an electrically conductive pillar disposed on the conductive layer, and within the dish-shape and perpendicular to a bottom of the dish-shape base, where a circular gap is disposed between the conductive pillar and inner walls of the dish-shape base.