Photoelectrochemical etching for chip shaping of light emitting diodes
US8569085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2009 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Jan 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A photoelectrochemical (PEC) etch is performed for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material. The chip shaping involves varying an angle of incident light during the PEC etch to control an angle of the resulting sidewalls of the III-V semiconductor material. The sidewalls may be sloped as well as vertical, in order to scatter the guided modes out of the III-V semiconductor material rather than reflecting the guided modes back into the III-V semiconductor material. In addition to shaping the chip in order to extract light emitted into guided modes, the chip may be shaped to act as a lens, to focus its output light, or to direct its output light in a particular way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.