Method for dry chemical treatment of substrates and also use thereof
US8569175B2 · kind B2 · utility
1Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Apr 28, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to a method for dry chemical treatment of substrates selected from the group comprising silicon, ceramic, glass, and quartz glass, in which the substrate is treated in a heated reaction chamber with a gas which contains hydrogen chloride as etching agent, and also to a substrate which can be produced in this way. The invention likewise relates to uses of the previously mentioned method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.