Self clamping FET devices in circuits using transient sources
US8569811B1 · kind B1 · utility
8Cited by
15References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2012 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | May 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Various aspects of the technology provide for clamping a transient from a transient generator in a circuit using a Field Effect Transistor (FET) including a compound semiconductor layer forming a drain coupled to the transient voltage generator, a source, and a gate. The gate and the drain may be configured to clamp voltage transients in the circuit from the transient voltage generator independent of a clamping diode between the source and the drain. The FET may be a depletion mode type fabricated using germanium or a compound semiconductor such as gallium arsenide (GaAs) or gallium nitride (GaN).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.