Sensor and method for fabricating the same
US8569851B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 18, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Jan 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0054
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.