Diamondoid monolayers as electron emitters

US8569941B2 · kind B2 · utility

Assignees

• The Board of Trustees of the Leland Stanford Junior University · US
• The Regents of the University of California · US

Inventors

• Wanli Yang · Corona, US
• Jason D. Fabbri · San Francisco, US
• Nicholas A. Melosh · Menlo Park, US
• Zahid M. HUSSAIN · Derby, GB
• Zhi-Xun Shen · Stanford, US

Key dates

• Filing date: Apr 9, 2012
• Grant date: Oct 29, 2013
• Expiry date: Apr 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2201/30457
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.