Charge pump circuit using low voltage transistors
US8570813B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The charge pump circuit has a plurality of cascaded charge pump stages, each provided with a first pump capacitor connected to a first internal node and receiving a first high voltage phase signal, and a second pump capacitor connected to a second internal node and receiving a second high voltage phase signal, complementary with respect to the first. A first transfer transistor is coupled between the first internal node and an intermediate node, and a second transfer transistor is coupled between the second internal node and the intermediate node. The first and second high voltage phase signals have a voltage dynamics higher than a maximum voltage sustainable by the first and second transfer transistors. A protection stage is set between the first internal node and second internal node and respectively, the first transfer transistor and second transfer transistor, for protecting the same transfer transistors from overvoltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.