Method for producing piezoelectric composite substrate and method for producing piezoelectric element
US8572825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Dec 17, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49126
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a piezoelectric composite substrate with satisfactory productivity controls the inclination of the crystal axis and the polar axis of a single-crystal thin film and prevents an adverse effect due to pyroelectricity in a production process. The method for producing a piezoelectric composite substrate provided with a plurality of piezoelectric materials includes an ion-implantation step, a bonding step, and a separation step. In the ion-implantation step, H+ ions are implanted into a piezoelectric single crystal material. In the bonding step, the piezoelectric single crystal material is bonded to a piezoelectric single crystal material. At this time, the polarity of the polar surface of the piezoelectric single crystal material is opposite to the polarity of the polar surface of the piezoelectric single crystal material, the polar surfaces being bonded to each other. In the separation step, a separation layer of the piezoelectric single crystal material is divided by heating to separate a piezoelectric single-crystal thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.