Method and apparatus for improved high power impulse magnetron sputtering
US8574410B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Feb 17, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Mar 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3467
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 μs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.