Semiconductor light emitting device and method for manufacturing the same
US8574936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.