Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
US8574938B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Nov 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.