Semiconductor device having air gap and method for manufacturing the same
US8575024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jan 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device having an air gap, includes: providing a substrate having a first dielectric layer and a second dielectric layer formed thereon successively; forming a mask layer on the second dielectric layer; patterning the first and the second dielectric layer by using the mask layer as a mask so as to form a plurality of grooves; filling a conducting material into the grooves; removing redundant conducting material on the second dielectric layer utill the second dielectric layer is exposed so as to form a plurality of conductive trenches; forming a molecular sieve on the second dielectric layer and the conductive trenches; and removing the second dielectric layer partly or completely by flowing a reactant gas towards the second dielectric layer through the molecular sieve, so as to form an air gap. It is novel and simple to form an air gap through molecular sieve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.