Lattice matchable alloy for solar cells
US8575473B2 · kind B2 · utility
16Cited by
39References
6Claims
0Family size
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Dec 25, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.