Integrated structure of CIS based solar cell
US8575478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2008 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Mar 15, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.