Image sensor array for back side illumination with global shutter using a junction gate photodiode
US8575531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Mar 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.