Nonvolatile semiconductor memory device
US8575590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, there is provided a nonvolatile semiconductor memory device including a first interconnection layer, memory cell modules each of which is formed by laminating a non-ohmic element layer with an MIM structure having an insulating film sandwiched between metal films and a variable resistance element layer, and a second interconnection layer formed on the memory cell modules, the insulating film of the non-ohmic element layer includes plural layers whose electron barriers and dielectric constants are different, or contains impurity atoms that form defect levels in the insulating film or contains semiconductor or metal dots. The nonvolatile semiconductor memory device using non-ohmic elements and variable resistance elements in which memory cells can be miniaturized and formed at low temperatures is realized by utilizing the above structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.