Semiconductor light emitting device and fabrication method thereof
US8575593B2 · kind B2 · utility
2Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Jul 25, 2012 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jul 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.