Avalanche photodiode

US8575650B2 · kind B2 · utility

Assignees

• NTT Electronics Corporation · JP
• NIPPON TELEGRAPH AND TELEPHONE CORPORATION · JP

Inventors

• Tadao Ishibashi · Yokohama, JP
• Seigo Ando · Tokyo, JP
• Yoshifumi Muramoto · Nagaokakyo, JP
• Fumito Nakajima · Kure, JP
• Haruki Yokoyama · Atsugi, JP

Key dates

• Filing date: Dec 11, 2009
• Grant date: Nov 5, 2013
• Expiry date: Dec 11, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/2255

Abstract

An electron injected APD with an embedded n electrode structure in which edge breakdown can be suppressed without controlling the doping profile of an n-type region of the embedded n electrode structure with high precision. The APD comprising a buffer layer with a low ionization rate is inserted between an n electrode connecting layer and an avalanche multiplication layer. Specifically, the APD is an electron injected APD in which an n electrode layer, the n electrode connecting layer, the buffer layer, the avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer are sequentially stacked, and a light absorbing portion that includes at least the low-concentration light absorbing layer and the p-type light absorbing layer forms a mesa shape.