Semiconductor device and method for fabricating semiconductor device
US8575702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2010 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Nov 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
Abstract
A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.