Microelectromechanical resonators with passive frequency tuning using built-in piezoelectric-based varactors
US8575819B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | May 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/155
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Microelectromechanical resonators include a resonator body with a built-in piezoelectric-based varactor diode. This built-in varactor diode supports passive frequency tuning by enabling low-power manipulation of the stiffness of a piezoelectric layer, in response to controlling charge build-up therein at resonance. A resonator may include a composite stack of a bottom electrode, a piezoelectric layer on the bottom electrode and at least one top electrode on the piezoelectric layer. The piezoelectric layer includes a built-in varactor diode, which is defined by at least two regions having different concentrations of electrically active dopants therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.