Stacked bulk acoustic resonator
US8575820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jul 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0428
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.