Optoelectronic device with controlled temperature dependence of the emission wavelength and method of making same
US8576472B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2010 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Sep 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device representing a reflector, for example an evanescent reflector or a multilayer interference reflector, with at least one reflectivity stopband is disclosed. A medium with means of generating optical gain is introduced into the layer or several layers of the reflector. The optical gain spectrum preferably overlaps with the spectral range of the reflectivity stopband. This reflector is attached to multilayer passive cavity structure made of semiconducting, and/or dielectric, and/or metallic materials with the inserted tools of achieving wavelength selection of the optical modes. For example, volume Bragg gratings, distributed feedback gratings or patterns, using of vertical optical cavities surrounded by multilayer Bragg reflectors can be applied. The optical modes of the passive optical cavity partially penetrate into the gain region of the reflector. As a result of the interaction of the gain medium in the reflector region and the passive cavity modes, photons are generated or amplified in the passive cavity at wavelengths defined by the passive cavity modes. The materials selected for the passive cavity layers are chosen to provide the necessary temperature dependence of t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.